3CG1030 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

3CG1030 Specs and Replacement

Type Designator: 3CG1030

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 85

Noise Figure, dB: -

Package: TO92S

3CG1030 Substitution

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3CG1030 datasheet

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2SB1030(3CG1030) 2SB1030A(3CG1030A) PNP /SILICON PNP TRANSISTOR , 2SD1423(3DG1423)/2SD1423A(3DG1423A) Purpose Low frequency power amplifier, complementary to 2SD1423(3DG1423)/2SD1423A(3DG1423A). Features Optimum for high-density mounting. /Absolute Maximum Ratin... See More ⇒

0.1. Size:247K lzg

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3cg1037ak.pdf pdf_icon

2SA1037AK(3CG1037AK) PNP /SILICON PNP TRANSISTOR /Purpose General amplifier applications. , 2SC2412K(3DG2412K) /Features Excellent h linearity, FE Complementary pair with 2SC2412K(3DG2412K). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -60 V C... See More ⇒

8.2. Size:873K lzg

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