3CG1030A Datasheet, Equivalent, Cross Reference Search
Type Designator: 3CG1030A
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 85
Noise Figure, dB: -
Package: TO92S
3CG1030A Transistor Equivalent Substitute - Cross-Reference Search
3CG1030A Datasheet (PDF)
3cg1030a.pdf
2SB1030(3CG1030) 2SB1030A(3CG1030A) PNP /SILICON PNP TRANSISTOR :, 2SD1423(3DG1423)/2SD1423A(3DG1423A) Purpose: Low frequency power amplifier, complementary to 2SD1423(3DG1423)/2SD1423A(3DG1423A). : Features: Optimum for high-density mounting. /Absolute Maximum Ratin
3cg1030.pdf
2SB1030(3CG1030) 2SB1030A(3CG1030A) PNP /SILICON PNP TRANSISTOR :, 2SD1423(3DG1423)/2SD1423A(3DG1423A) Purpose: Low frequency power amplifier, complementary to 2SD1423(3DG1423)/2SD1423A(3DG1423A). : Features: Optimum for high-density mounting. /Absolute Maximum Ratin
3cg1037ak.pdf
2SA1037AK(3CG1037AK) PNP /SILICON PNP TRANSISTOR : /Purpose: General amplifier applications. :, 2SC2412K(3DG2412K)/Features: Excellent h linearity, FEComplementary pair with 2SC2412K(3DG2412K). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -60 V C
3cg1036k.pdf
2SA1036K(3CG1036K) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power amplifier applications. : 2SC2411K3DG2411K Features: .Large Ic low Vce(sat),complementary pair with the 2SC2411K(3DG2411K). /Absolute maximum ratings(Ta=25)
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SA269
