3CG1201 Specs and Replacement

Type Designator: 3CG1201

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SOT89

 3CG1201 Substitution

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3CG1201 datasheet

 ..1. Size:317K  lzg

3cg1201.pdf pdf_icon

3CG1201

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 8.1. Size:263K  lzg

3cg1203.pdf pdf_icon

3CG1201

2SA1203(3CG1203) PNP /SILICON PNP TRANSISTOR Purpose Audio frequency amplifier applications. 3W 2SC2883 3DG2883 Features Suitable for output stage of 3 watts amplifier, small flat package, complementary to 2SC2883(3DG2883). /Absolute maximum ratings(Ta=2... See More ⇒

 8.2. Size:30K  shaanxi

3cg120.pdf pdf_icon

3CG1201

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG120,3CG130 PNP Silicon High Frequency Middle Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power... See More ⇒

 9.1. Size:115K  china

3cg12.pdf pdf_icon

3CG1201

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Detailed specifications: 3CG1175, 3CG1182, 3CG1188, 3CG1189, 3CG1197K, 3CG1198K, 3CG12, 3CG12, 2SC5200, 3CG1203, 3CG1213, 3CG1218A, 3CG1260, 3CG1283, 3CG1295, 3CG130, 3CG1300

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