3CG1203 Specs and Replacement
Type Designator: 3CG1203
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT89
3CG1203 Substitution
- BJT ⓘ Cross-Reference Search
3CG1203 datasheet
2SA1203(3CG1203) PNP /SILICON PNP TRANSISTOR Purpose Audio frequency amplifier applications. 3W 2SC2883 3DG2883 Features Suitable for output stage of 3 watts amplifier, small flat package, complementary to 2SC2883(3DG2883). /Absolute maximum ratings(Ta=2... See More ⇒
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG120,3CG130 PNP Silicon High Frequency Middle Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power... See More ⇒
Detailed specifications: 3CG1182, 3CG1188, 3CG1189, 3CG1197K, 3CG1198K, 3CG12, 3CG12, 3CG1201, TIP41C, 3CG1213, 3CG1218A, 3CG1260, 3CG1283, 3CG1295, 3CG130, 3CG1300, 3CG131
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