All Transistors. 3CG160 Datasheet

 

3CG160 Datasheet and Replacement


   Type Designator: 3CG160
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.02 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO18
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3CG160 Datasheet (PDF)

 ..1. Size:31K  shaanxi
 3cg160.pdf pdf_icon

3CG160

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG160,3CG170 PNP Silicon High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power

 9.1. Size:230K  lzg
 3cg1621.pdf pdf_icon

3CG160

2SA1621(3CG1621) PNP /SILICON PNP TRANSISTOR . Purpose: Audio power amplifier application . , 2SC4210(3DG4210) Features: High hFE,complementary pair with 2SC4210(3DG4210). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -35 V CBO V -30 V C

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BFW29 | MCH3245 | 2SC5050 | 2SC1083 | KD240C | MRF5812 | 2SC1727

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