3CG160 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3CG160
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO18
3CG160 Transistor Equivalent Substitute - Cross-Reference Search
3CG160 Datasheet (PDF)
3cg160.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG160,3CG170 PNP Silicon High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power
3cg1621.pdf
2SA1621(3CG1621) PNP /SILICON PNP TRANSISTOR . Purpose: Audio power amplifier application . , 2SC4210(3DG4210) Features: High hFE,complementary pair with 2SC4210(3DG4210). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -35 V CBO V -30 V C
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
