3CG160 Specs and Replacement

Type Designator: 3CG160

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.02 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO18

 3CG160 Substitution

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3CG160 datasheet

 ..1. Size:31K  shaanxi

 3cg160.pdf pdf_icon

3CG160

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG160,3CG170 PNP Silicon High Frequency Middle Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power... See More ⇒

 9.1. Size:230K  lzg

 3cg1621.pdf pdf_icon

3CG160

2SA1621(3CG1621) PNP /SILICON PNP TRANSISTOR . Purpose Audio power amplifier application . , 2SC4210(3DG4210) Features High hFE,complementary pair with 2SC4210(3DG4210). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -35 V CBO V -30 V C... See More ⇒

Detailed specifications: 3CG1386, 3CG1424, 3CG1426, 3CG1440, 3CG1576A, 3CG1577W, 3CG1585S, 3CG1590K, TIP42C, 3CG1621, 3CG170, 3CG1700, 3CG1797, 3CG17B, 3CG180, 3CG182, 3CG1955

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