All Transistors. 3CG170 Datasheet

 

3CG170 Datasheet and Replacement


   Type Designator: 3CG170
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO18
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3CG170 Datasheet (PDF)

 ..1. Size:98K  china
 3cg170.pdf pdf_icon

3CG170

LJ2015-373CG170 PNP A B C D EP Ta=25 500 mWCMI 50 mACMT 175 jmT -55~150 stgV I =0.1mA 80 120 160 200 240 V(BR)CBO CBV I =0.1mA 60 100 140 180 200 V(BR)CEO CEV I =0.1mA 4.0 V(BR)EBO EB I V =3

 0.1. Size:261K  lzg
 3cg1700.pdf pdf_icon

3CG170

2SA1700(3CG1700) PNP /SILICON PNP TRANSISTOR Purpose: High voltage driver applications. MBIT FeaturesHigh breakdown voltage, adoption of MBIT process excellent hFE linearity. /Absolute maximum ratings(Ta=25)

 9.1. Size:121K  china
 3cg17b.pdf pdf_icon

3CG170

3CG17B PNP PCM TA=25 150 mW ICM 20 mA Tjm 175 Tstg -55~150 V(BR)CEO ICE=0.1mA 12 V V(BR)EBO IEB=0.1mA 4.0 V ICEO VCE=6V 0.2 A IC=10mA VCEsat 0.5 V IB=1mA VCE=6V hFE 30 IC=2mA VCE=5V fT IC=5mA 100 MHz fo=3

 9.2. Size:284K  lzg
 3cg1797.pdf pdf_icon

3CG170

2SA1797(3CG1797) PNP /SILICON PNP TRANSISTOR :,, 2SC4672(3DG4672) Features: Low saturation voltage, excellent DC current gain characteristics, complements the 2SC4672(3DG4672). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -50 V CBO V -50 V

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Keywords - 3CG170 transistor datasheet

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