3CG170 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3CG170
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO18
3CG170 Transistor Equivalent Substitute - Cross-Reference Search
3CG170 Datasheet (PDF)
3cg170.pdf
LJ2015-373CG170 PNP A B C D EP Ta=25 500 mWCMI 50 mACMT 175 jmT -55~150 stgV I =0.1mA 80 120 160 200 240 V(BR)CBO CBV I =0.1mA 60 100 140 180 200 V(BR)CEO CEV I =0.1mA 4.0 V(BR)EBO EB I V =3
3cg1700.pdf
2SA1700(3CG1700) PNP /SILICON PNP TRANSISTOR Purpose: High voltage driver applications. MBIT FeaturesHigh breakdown voltage, adoption of MBIT process excellent hFE linearity. /Absolute maximum ratings(Ta=25)
3cg17b.pdf
3CG17B PNP PCM TA=25 150 mW ICM 20 mA Tjm 175 Tstg -55~150 V(BR)CEO ICE=0.1mA 12 V V(BR)EBO IEB=0.1mA 4.0 V ICEO VCE=6V 0.2 A IC=10mA VCEsat 0.5 V IB=1mA VCE=6V hFE 30 IC=2mA VCE=5V fT IC=5mA 100 MHz fo=3
3cg1797.pdf
2SA1797(3CG1797) PNP /SILICON PNP TRANSISTOR :,, 2SC4672(3DG4672) Features: Low saturation voltage, excellent DC current gain characteristics, complements the 2SC4672(3DG4672). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -50 V CBO V -50 V
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: MSC2712GT1G | BFG193
History: MSC2712GT1G | BFG193
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050