3CG17B Specs and Replacement

Type Designator: 3CG17B

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.02 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO92 SOT23

 3CG17B Substitution

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3CG17B datasheet

 ..1. Size:121K  china

 3cg17b.pdf pdf_icon

3CG17B

3CG17B PNP PCM TA=25 150 mW ICM 20 mA Tjm 175 Tstg -55 150 V(BR)CEO ICE=0.1mA 12 V V(BR)EBO IEB=0.1mA 4.0 V ICEO VCE=6V 0.2 A IC=10mA VCEsat 0.5 V IB=1mA VCE=6V hFE 30 IC=2mA VCE=5V fT IC=5mA 100 MHz fo=3... See More ⇒

 9.1. Size:98K  china

 3cg170.pdf pdf_icon

3CG17B

LJ2015-37 3CG170 PNP A B C D E P Ta=25 500 mW CM I 50 mA CM T 175 jm T -55 150 stg V I =0.1mA 80 120 160 200 240 V (BR)CBO CB V I =0.1mA 60 100 140 180 200 V (BR)CEO CE V I =0.1mA 4.0 V (BR)EBO EB I V =3... See More ⇒

 9.2. Size:284K  lzg

 3cg1797.pdf pdf_icon

3CG17B

2SA1797(3CG1797) PNP /SILICON PNP TRANSISTOR , , 2SC4672(3DG4672) Features Low saturation voltage, excellent DC current gain characteristics, complements the 2SC4672(3DG4672). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -50 V CBO V -50 V... See More ⇒

 9.3. Size:261K  lzg

 3cg1700.pdf pdf_icon

3CG17B

2SA1700(3CG1700) PNP /SILICON PNP TRANSISTOR Purpose High voltage driver applications. MBIT Features High breakdown voltage, adoption of MBIT process excellent hFE linearity. /Absolute maximum ratings(Ta=25 ) ... See More ⇒

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Detailed specifications: 3CG1577W, 3CG1585S, 3CG1590K, 3CG160, 3CG1621, 3CG170, 3CG1700, 3CG1797, 2N2222A, 3CG180, 3CG182, 3CG1955, 3CG1979S, 3CG1980, 3CG1980M, 3CG1981, 3CG1981M

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