3CG1955 Datasheet and Replacement
Type Designator: 3CG1955
SMD Transistor Code: HGAA_HGAB
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 4.2 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: SOT23
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3CG1955 Datasheet (PDF)
3cg1955.pdf

2SA1955(3CG1955) PNP /SILICON PNP TRANSISTOR : Purpose: General purpose amplifier and muting switch application . , Features: Low saturation voltage, large collector current. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -15 V CBO V -12 V
3cg1980.pdf

2SA1980(3CG1980) PNP /SILICON PNP TRANSISTOR : Purpose: General small signal amplifier applications. : 2SC5343(3DG5343) Features: Low V ,low output capacitance, complementary pair with 2SC5343(3DG5343). CE(sat)/Absolute maximum ratings(Ta=25)
3cg1981m.pdf

2SA1981S(3CG1981M) PNP /SILICON PNP TRANSISTOR : Purpose: Audio power amplifier application. : 2SC5344S(3DG5344M) Features: High h , complementary pair with 2SC5344S(3DG5344M). FE/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -35 V CBO V -30
3cg1979s.pdf

2SA1979S(3CG1979S) PNP /SILICON PNP TRANSISTOR Purpose: Medium power amplifier applications. ,, 2SC5342S(3DG5342S) Features: Large I ,low V ,complementary pair with the 2SC5342S(3DG5342S). C CE(sat)/Absolute maximum ratings(Ta=25)
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: KSC2756
Keywords - 3CG1955 transistor datasheet
3CG1955 cross reference
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History: KSC2756



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