3CG1955 Specs and Replacement
Type Designator: 3CG1955
SMD Transistor Code: HGAA_HGAB
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 4.2 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Package: SOT23
3CG1955 Substitution
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3CG1955 datasheet
2SA1955(3CG1955) PNP /SILICON PNP TRANSISTOR Purpose General purpose amplifier and muting switch application . , Features Low saturation voltage, large collector current. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -15 V CBO V -12 V ... See More ⇒
2SA1980(3CG1980) PNP /SILICON PNP TRANSISTOR Purpose General small signal amplifier applications. 2SC5343(3DG5343) Features Low V ,low output capacitance, complementary pair with 2SC5343(3DG5343). CE(sat) /Absolute maximum ratings(Ta=25 ) ... See More ⇒
2SA1981S(3CG1981M) PNP /SILICON PNP TRANSISTOR Purpose Audio power amplifier application. 2SC5344S(3DG5344M) Features High h , complementary pair with 2SC5344S(3DG5344M). FE /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -35 V CBO V -30... See More ⇒
2SA1979S(3CG1979S) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , , 2SC5342S(3DG5342S) Features Large I ,low V ,complementary pair with the 2SC5342S(3DG5342S). C CE(sat) /Absolute maximum ratings(Ta=25 ) ... See More ⇒
Detailed specifications: 3CG160, 3CG1621, 3CG170, 3CG1700, 3CG1797, 3CG17B, 3CG180, 3CG182, 2SD1047, 3CG1979S, 3CG1980, 3CG1980M, 3CG1981, 3CG1981M, 3CG2, 3CG200, 3CG201
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