3CG200 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3CG200
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO18
3CG200 Transistor Equivalent Substitute - Cross-Reference Search
3CG200 Datasheet (PDF)
3cg200.pdf
3CG200 PNP A B C D E F G PCM 700 mW ICM 200 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.05mA 20 30 40 50 60 70 80 V V(BR)CEO ICE=0.05mA 15 20 30 40 50 60 70 V V(BR)EBO IEB=0.05mA 4.0 V ICBO VCB=10V 0.2 A ICEO VCE=10V
3cg201.pdf
3CG201 PNP A B C D PCM TA=25 1 W ICM 1 A Tjm 175 Tstg -55~150 V(BR)CEO ICE=0.1mA 60 100 140 180 V V(BR)EBO IEB=0.1mA 4.0 V ICEO VCE=30V 1.0 A IC=500mA VCEsat 0.5 V IB=50mA VCE=5V hFE 25~270 IC=200mA VCE=10V
3cg2048.pdf
2SA2048(3CG2048) PNP /SILICON PNP RANSISTOR :, Purpose: Small signal low frequency amplifier, high speed switching. 2SC5730(3DG5730) Features: High speed switching, low saturation voltage, complements the 2SC5730(3DG5730). /Absolute maximum ratings(Ta=2
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
