All Transistors. 3CG2048 Datasheet

 

3CG2048 Datasheet and Replacement


   Type Designator: 3CG2048
   SMD Transistor Code: HULQ_HULR
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 350 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT23
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3CG2048 Datasheet (PDF)

 ..1. Size:176K  lzg
 3cg2048.pdf pdf_icon

3CG2048

2SA2048(3CG2048) PNP /SILICON PNP RANSISTOR :, Purpose: Small signal low frequency amplifier, high speed switching. 2SC5730(3DG5730) Features: High speed switching, low saturation voltage, complements the 2SC5730(3DG5730). /Absolute maximum ratings(Ta=2

 9.1. Size:113K  china
 3cg201.pdf pdf_icon

3CG2048

3CG201 PNP A B C D PCM TA=25 1 W ICM 1 A Tjm 175 Tstg -55~150 V(BR)CEO ICE=0.1mA 60 100 140 180 V V(BR)EBO IEB=0.1mA 4.0 V ICEO VCE=30V 1.0 A IC=500mA VCEsat 0.5 V IB=50mA VCE=5V hFE 25~270 IC=200mA VCE=10V

 9.2. Size:124K  china
 3cg200.pdf pdf_icon

3CG2048

3CG200 PNP A B C D E F G PCM 700 mW ICM 200 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.05mA 20 30 40 50 60 70 80 V V(BR)CEO ICE=0.05mA 15 20 30 40 50 60 70 V V(BR)EBO IEB=0.05mA 4.0 V ICBO VCB=10V 0.2 A ICEO VCE=10V

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: FMMT723 | 2N3322 | MJ10011 | CHTA42XGP | BCP5316QTA | 2SD1905S | S2055N

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