3CG23 Specs and Replacement
Type Designator: 3CG23
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO18
3CG23 Substitution
- BJT ⓘ Cross-Reference Search
3CG23 datasheet
3CG23 PNP A B C D E F G PCM 700 mW ICM 150 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 30 45 60 75 90 105 V V(BR)CEO ICE=0.1mA 15 25 40 55 70 85 100 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.5 A ICEO VCE=10V 1.... See More ⇒
Detailed specifications: 3CG1981, 3CG1981M, 3CG2, 3CG200, 3CG201, 3CG2048, 3CG21, 3CG22, 2SA1837, 3CG2905, 3CG2907, 3CG2907A, 3CG298, 3CG3, 3CG3906, 3CG4126, 3CG4403
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