3CG5415 Specs and Replacement
Type Designator: 3CG5415
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO18
3CG5415 Substitution
- BJT ⓘ Cross-Reference Search
3CG5415 datasheet
3CG5415 PNP A B C D PCM 750 mW ICM 1000 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 100 140 180 220 V V(BR)CEO ICE=0.1mA 100 140 180 220 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=30V 10 A ICEO VCE=30V 50 A IEBO VEB=2V 10 A ... See More ⇒
Detailed specifications: 3CG2907A, 3CG298, 3CG3, 3CG3906, 3CG4126, 3CG4403, 3CG5, 3CG5087, SS8050, 3CG56, 3CG560, 3CG561, 3CG562, 3CG562M, 3CG562TM, 3CG5T3Z, 3CG6
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