3CG561 Specs and Replacement

Type Designator: 3CG561

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.7 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 350 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 85

Noise Figure, dB: -

Package: TO92

 3CG561 Substitution

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3CG561 datasheet

 ..1. Size:189K  lzg

 3cg561.pdf pdf_icon

3CG561

2SB561(3CG561) PNP /SILICON PNP TRANSISTOR Purpose Low frequency power amplifier. 2SD467(3DG467) Features Complementary pair with 2SD467(3DG467). /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V CBO -25 V V -20 V CEO V -5.0 V EBO I -0.7 A C... See More ⇒

 9.1. Size:129K  china

 3cg56.pdf pdf_icon

3CG561

3CG56 PNP TO-92 SOT-23 SOT-223 PCM TA=25 mW 625 350 1000 Rj-a TA>25 5.0 2.8 8.0 mW/ ICM 0.5 mA Tjm 150 Tstg -55 150 V(BR)CBO ICB=0.1mA 80 V V(BR)CEO ICE=1mA 80 V ICBO IEB=0.1mA 4 A ICEO VCB=80V 0.1 A IEBO VCE=60V 0.1 A ... See More ⇒

 9.2. Size:113K  china

 3cg560.pdf pdf_icon

3CG561

3CG560 PNP PCM TA=25 500 mW ICM 500 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 450 V V(BR)CEO ICE=0.1mA 450 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=360V 0.1 A ICEO VCE=360V 0.1 A IEBO VEB=5.0V 0.1 A VBEsat 0.9 IC=50mA V I... See More ⇒

 9.3. Size:255K  china

 3cg562.pdf pdf_icon

3CG561

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Detailed specifications: 3CG3906, 3CG4126, 3CG4403, 3CG5, 3CG5087, 3CG5415, 3CG56, 3CG560, TIP42, 3CG562, 3CG562M, 3CG562TM, 3CG5T3Z, 3CG6, 3CG608, 3CG608K, 3CG624

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