3CG562M Specs and Replacement

Type Designator: 3CG562M

SMD Transistor Code: HVAO_HVAY

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 13 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: SOT23

 3CG562M Substitution

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3CG562M datasheet

 ..1. Size:258K  lzg

 3cg562m.pdf pdf_icon

3CG562M

2SA562M(3CG562M) PNP /SILICON PNP TRANSISTOR Purpose Audio frequency low power amplifier, driver stage amplifier, switching applications. h , 2SC1959M(3DG1959M) FE Features Excellent h linearity, complementary pair with 2SC1959M(3DG1959M). FE ... See More ⇒

 8.1. Size:255K  china

 3cg562.pdf pdf_icon

3CG562M

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 8.2. Size:193K  lzg

 3cg562tm.pdf pdf_icon

3CG562M

2SA562TM(3CG562TM) PNP /SILICON PNP TRANSISTOR Purpose Audio frequency low power amplifier, driver stage amplifier, switching applications. h ,1W , 2SC1959(3DG1959) FE Features Excellent h linearity,1 watt amplifier application, complementary pair with... See More ⇒

 9.1. Size:129K  china

 3cg56.pdf pdf_icon

3CG562M

3CG56 PNP TO-92 SOT-23 SOT-223 PCM TA=25 mW 625 350 1000 Rj-a TA>25 5.0 2.8 8.0 mW/ ICM 0.5 mA Tjm 150 Tstg -55 150 V(BR)CBO ICB=0.1mA 80 V V(BR)CEO ICE=1mA 80 V ICBO IEB=0.1mA 4 A ICEO VCB=80V 0.1 A IEBO VCE=60V 0.1 A ... See More ⇒

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Detailed specifications: 3CG4403, 3CG5, 3CG5087, 3CG5415, 3CG56, 3CG560, 3CG561, 3CG562, 2SC945, 3CG562TM, 3CG5T3Z, 3CG6, 3CG608, 3CG608K, 3CG624, 3CG636, 3CG640

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