3CG640 Specs and Replacement

Type Designator: 3CG640

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO18

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3CG640 datasheet

 ..1. Size:30K  shaanxi

 3cg640.pdf pdf_icon

3CG640

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG640, 3CG708 PNP Silicon High Frequency Middle Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low powe... See More ⇒

Detailed specifications: 3CG562M, 3CG562TM, 3CG5T3Z, 3CG6, 3CG608, 3CG608K, 3CG624, 3CG636, 2N4401, 3CG6517, 3CG673, 3CG673A, 3CG698, 3CG708, 3CG709A, 3CG715, 3CG715F

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