3CG6517 Specs and Replacement

Type Designator: 3CG6517

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 350 V

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO92

 3CG6517 Substitution

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3CG6517 datasheet

 ..1. Size:258K  lzg

 3cg6517.pdf pdf_icon

3CG6517

2N6517(3CG6517) NPN /SILICON NPN TRANSISTOR /Purpose High voltage application. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 350 V CBO V 350 V CEO V 6.0 V EBO I 500 mA C P 625 mW C T 150 j T -55 150 stg /Electrical characteristics(Ta=... See More ⇒

 0.1. Size:264K  foshan

 2n6517m 3cg6517m.pdf pdf_icon

3CG6517

2N6517M(3CG6517M) NPN /SILICON NPN TRANSISTOR /Purpose High voltage application. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 350 V CBO V 350 V CEO V 6.0 V EBO I 500 mA C P 300 mW C T 150 j T -55 150 stg /Electrical characteristics(T... See More ⇒

Detailed specifications: 3CG562TM, 3CG5T3Z, 3CG6, 3CG608, 3CG608K, 3CG624, 3CG636, 3CG640, 2222A, 3CG673, 3CG673A, 3CG698, 3CG708, 3CG709A, 3CG715, 3CG715F, 3CG719

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