3CG6517 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3CG6517
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO92
3CG6517 Transistor Equivalent Substitute - Cross-Reference Search
3CG6517 Datasheet (PDF)
3cg6517.pdf
2N6517(3CG6517) NPN /SILICON NPN TRANSISTOR :/Purpose: High voltage application. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 350 V CBO V 350 V CEO V 6.0 V EBO I 500 mA C P 625 mW CT 150 j T -55150 stg /Electrical characteristics(Ta=
2n6517m 3cg6517m.pdf
2N6517M(3CG6517M) NPN /SILICON NPN TRANSISTOR :/Purpose: High voltage application. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 350 V CBO V 350 V CEO V 6.0 V EBO I 500 mA C P 300 mW CT 150 j T -55150 stg /Electrical characteristics(T
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: MJ4211
