All Transistors. 3CG708 Datasheet

 

3CG708 Datasheet and Replacement


   Type Designator: 3CG708
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO18
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3CG708 Datasheet (PDF)

 ..1. Size:23K  shaanxi
 3cg708.pdf pdf_icon

3CG708

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG708PNP Silicon High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source

 9.1. Size:341K  lzg
 3cg709a.pdf pdf_icon

3CG708

2SB709A(3CG709A) PNP /SILICON PNP TRANSISTOR :/Purpose: General power amplifier applications. : 2SD601A(3DG601A)/Features:Complementary pair with 2SD601A(3DG601A). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -45 V CBO V -45 V CEO V -7.0 V EBO I -100 mA

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: TI413 | KRA741U | D60T5050 | 3DD13007_Z8 | RN4984 | RN2962 | ZXTP2012Z

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