3CG708 Specs and Replacement
Type Designator: 3CG708
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO18
3CG708 Substitution
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3CG708 datasheet
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG708 PNP Silicon High Frequency Middle Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source ... See More ⇒
2SB709A(3CG709A) PNP /SILICON PNP TRANSISTOR /Purpose General power amplifier applications. 2SD601A(3DG601A) /Features Complementary pair with 2SD601A(3DG601A). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -45 V CBO V -45 V CEO V -7.0 V EBO I -100 mA ... See More ⇒
Detailed specifications: 3CG608K, 3CG624, 3CG636, 3CG640, 3CG6517, 3CG673, 3CG673A, 3CG698, 2SD669A, 3CG709A, 3CG715, 3CG715F, 3CG719, 3CG720, 3CG733, 3CG733M, 3CG739
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