3CG715 Specs and Replacement

Type Designator: 3CG715

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 160 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO126

 3CG715 Substitution

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3CG715 datasheet

 ..1. Size:354K  lzg

3cg715.pdf pdf_icon

3CG715

2SA715(3CG715) PNP /SILICON PNP TRANSISTOR /Purpose Low frequency power amplifier applications. 2SC1162(3DA1162) /Features Complementary pair with 2SC1162(3DA1162). /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V -35 V CBO V -35 V CEO V -5.0 V EBO I -2.5... See More ⇒

 0.1. Size:352K  lzg

3cg715f.pdf pdf_icon

3CG715

2SA715F(3CG715F) PNP /SILICON PNP TRANSISTOR /Purpose Low frequency power amplifier applications. 2SC1162F(3DA1162F) /Features Complementary pair with 2SC1162F(3DA1162F). /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V -35 V CBO V -35 V CEO V -5 V EBO I ... See More ⇒

 9.1. Size:298K  lzg

3cg719.pdf pdf_icon

3CG715

2SA719(3CG719) PNP /SILICON PNP TRANSISTOR /Purpose AF output amplifier and driver. 2SC1317(3DG1317) /Features Complementary pair with 2SC1317(3DG1317). /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V -30 V CBO V -25 V CEO V -5.0 V EBO I -50... See More ⇒

Detailed specifications: 3CG636, 3CG640, 3CG6517, 3CG673, 3CG673A, 3CG698, 3CG708, 3CG709A, BC549, 3CG715F, 3CG719, 3CG720, 3CG733, 3CG733M, 3CG739, 3CG743, 3CG743A

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