3CG739 Specs and Replacement

Type Designator: 3CG739

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO92LM

 3CG739 Substitution

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3CG739 datasheet

 ..1. Size:252K  lzg

 3cg739.pdf pdf_icon

3CG739

2SB739(3CG739) PNP /SILICON PNP TRANSISTOR Purpose Low frequency power amplifier. 2SD788(3DG788) Features Complementary pair with 2SD788(3DG788). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -20 V CBO V -20 V CEO V -6.0 V EBO I -2.0 A C ... See More ⇒

 9.1. Size:258K  lzg

 3cg733.pdf pdf_icon

3CG739

2SA733(3CG733) PNP /SILICON PNP TRANSISTOR /Purpose Driver stage of AF power amplifier. h /Features High h and excellent h linearity. FE FE FE /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V -60 V CBO V -50 V CEO V -5.0 V EBO I -150 mA ... See More ⇒

 9.2. Size:345K  lzg

 3cg733m.pdf pdf_icon

3CG739

2SA733M(3CG733M) PNP /SILICON PNP TRANSISTOR /Purpose Driver stage of AF power amplifier. h /Features High h and excellent h linearity. FE FE FE /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V -60 V CBO V -50 V CEO V -5.0 V EBO I -... See More ⇒

Detailed specifications: 3CG708, 3CG709A, 3CG715, 3CG715F, 3CG719, 3CG720, 3CG733, 3CG733M, 2SC2383, 3CG743, 3CG743A, 3CG764, 3CG774, 3CG778, 3CG778A, 3CG790A, 3CG798

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