3CG807-16 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3CG807-16
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.31 W
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT23
3CG807-16 Transistor Equivalent Substitute - Cross-Reference Search
3CG807-16 Datasheet (PDF)
..1. Size:114K china
3cg807-16.pdf
3cg807-16.pdf
3CG807-16(BC807-16) PNP PCM TA=25 310 mW Tjm 175 Tstg -55~150 V(BR)CEO ICE=0.1mA 45 V V(BR)EBO IEB=0.1mA 5 V ICEO VCE=45V 0.1 A IEBO VEB=4V 0.1 A IC=500mA VCEsat 0.7 V IB=50mA VCE=1.0V hFE 100 IC=100m A VCE=5V
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: A748
