All Transistors. 3CG807-16 Datasheet

 

3CG807-16 Datasheet and Replacement


   Type Designator: 3CG807-16
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.31 W
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT23
      - BJT Cross-Reference Search

   

3CG807-16 Datasheet (PDF)

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3CG807-16

3CG807-16(BC807-16) PNP PCM TA=25 310 mW Tjm 175 Tstg -55~150 V(BR)CEO ICE=0.1mA 45 V V(BR)EBO IEB=0.1mA 5 V ICEO VCE=45V 0.1 A IEBO VEB=4V 0.1 A IC=500mA VCEsat 0.7 V IB=50mA VCE=1.0V hFE 100 IC=100m A VCE=5V

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 3DD03T | BTB1424AT3 | 2SB1144S | 2N2473 | MM4019 | BF420A | 2N3183

Keywords - 3CG807-16 transistor datasheet

 3CG807-16 cross reference
 3CG807-16 equivalent finder
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 3CG807-16 replacement

 

 
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