3CG807-16 Specs and Replacement
Type Designator: 3CG807-16
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.31 W
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT23
3CG807-16 Substitution
- BJT ⓘ Cross-Reference Search
3CG807-16 datasheet
3CG807-16(BC807-16) PNP PCM TA=25 310 mW Tjm 175 Tstg -55 150 V(BR)CEO ICE=0.1mA 45 V V(BR)EBO IEB=0.1mA 5 V ICEO VCE=45V 0.1 A IEBO VEB=4V 0.1 A IC=500mA VCEsat 0.7 V IB=50mA VCE=1.0V hFE 100 IC=100m A VCE=5V ... See More ⇒
Detailed specifications: 3CG743, 3CG743A, 3CG764, 3CG774, 3CG778, 3CG778A, 3CG790A, 3CG798, MJE350, 3CG812, 3CG817A, 3CG838, 3CG844, 3CG854S, 3CG8550, 3CG8550A, 3CG8551
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