3CG8550A Specs and Replacement

Type Designator: 3CG8550A

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 15 pF

Forward Current Transfer Ratio (hFE), MIN: 85

Noise Figure, dB: -

Package: TO92

 3CG8550A Substitution

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3CG8550A datasheet

 ..1. Size:184K  foshan

3cg8550a.pdf pdf_icon

3CG8550A

S8550A(3CG8550A) PNP /SILICON PNP TRANSISTOR Purpose Amplifier of portable radios in class B push-pull operation. P I , S8050A(3DG8050A) C C Features High P and I , complementary pair with S8050A(3DG8050A). C C /Absolute maximum ratings(Ta=25 ) Symbol Rati... See More ⇒

 7.1. Size:553K  jilin sino

3cg8550.pdf pdf_icon

3CG8550A

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 7.2. Size:136K  foshan

3cg8550m s8550m.pdf pdf_icon

3CG8550A

S8550M(3CG8550M) PNP /SILICON PNP TRANSISTOR /Purpose Power amplifier applications. S8050M(3DG8050M) /Features Complementary pair with S8050M(3DG8050M). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -40 V CBO V -25 V CEO V -6.0 V EBO I -800 mA ... See More ⇒

 7.3. Size:221K  foshan

3cg8550.pdf pdf_icon

3CG8550A

S8550(3CG8550) PNP /SILICON PNP TRANSISTOR Purpose Amplifier of portable radios in class B push-pull operation. P I , S8050(3DG8050) C C Features High P and I , complementary pair with S8050(3DG8050). C C /Absolute maximum ratings(Ta=25 ) Symbol Rating Uni... See More ⇒

Detailed specifications: 3CG798, 3CG807-16, 3CG812, 3CG817A, 3CG838, 3CG844, 3CG854S, 3CG8550, BD333, 3CG8551, 3CG857B, 3CG893, 3CG9, 3CG9012, 3CG926, 3CG937, 3CG950

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