3CG8551 Specs and Replacement
Type Designator: 3CG8551
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO92L
3CG8551 Substitution
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3CG8551 datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO 92L 3CG8551 TRANSISTOR (PNP) 1. EMITTER 2. COLLECTOR FEATURES General Purpose Switching Application 3. BASE Complementary to 3DG8051 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Vo... See More ⇒
S8550A(3CG8550A) PNP /SILICON PNP TRANSISTOR Purpose Amplifier of portable radios in class B push-pull operation. P I , S8050A(3DG8050A) C C Features High P and I , complementary pair with S8050A(3DG8050A). C C /Absolute maximum ratings(Ta=25 ) Symbol Rati... See More ⇒
S8550M(3CG8550M) PNP /SILICON PNP TRANSISTOR /Purpose Power amplifier applications. S8050M(3DG8050M) /Features Complementary pair with S8050M(3DG8050M). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -40 V CBO V -25 V CEO V -6.0 V EBO I -800 mA ... See More ⇒
Detailed specifications: 3CG807-16, 3CG812, 3CG817A, 3CG838, 3CG844, 3CG854S, 3CG8550, 3CG8550A, BDT88, 3CG857B, 3CG893, 3CG9, 3CG9012, 3CG926, 3CG937, 3CG950, 3CG952
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