All Transistors. 3CG8551 Datasheet

 

3CG8551 Datasheet and Replacement


   Type Designator: 3CG8551
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO92L
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3CG8551 Datasheet (PDF)

 ..1. Size:109K  jiangsu
 3cg8551.pdf pdf_icon

3CG8551

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO 92L 3CG8551 TRANSISTOR (PNP) 1. EMITTER 2. COLLECTOR FEATURES General Purpose Switching Application 3. BASE Complementary to 3DG8051 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Vo

 8.1. Size:553K  jilin sino
 3cg8550.pdf pdf_icon

3CG8551

PNP PNP EPITAXIAL SILICON TRANSISTOR R3CG8550 MAIN CHARACTERISTICS Package I -1.5A CV -25V CEOP 1W C APPLICATIONS High frequency switching power supply High frequency power transform Commonly power amplifier circuit TO-92

 8.2. Size:184K  foshan
 3cg8550a.pdf pdf_icon

3CG8551

S8550A(3CG8550A) PNP /SILICON PNP TRANSISTOR : Purpose: Amplifier of portable radios in class B push-pull operation. :P I , S8050A(3DG8050A) C CFeatures: High P and I , complementary pair with S8050A(3DG8050A). C C/Absolute maximum ratings(Ta=25) Symbol Rati

 8.3. Size:136K  foshan
 3cg8550m s8550m.pdf pdf_icon

3CG8551

S8550M(3CG8550M) PNP /SILICON PNP TRANSISTOR :/Purpose: Power amplifier applications. : S8050M(3DG8050M)/Features: Complementary pair with S8050M(3DG8050M). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -40 V CBO V -25 V CEO V -6.0 V EBO I -800 mA

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Keywords - 3CG8551 transistor datasheet

 3CG8551 cross reference
 3CG8551 equivalent finder
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 3CG8551 replacement

 

 
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