3CG937 Specs and Replacement
Type Designator: 3CG937
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: TO92
3CG937 Substitution
- BJT ⓘ Cross-Reference Search
3CG937 datasheet
2SA937(3CG937) PNP /SILICON PNP TRANSISTOR , , , , , Purpose General small-signal amplifier, preamplifiers, equalizer amplifiers, RF amplifiers and oscillators, medium-speed switching. 2SC2021(3DG2021) /Features Complementary pair with 2SC2021(3DG2021). ... See More ⇒
Detailed specifications: 3CG8550, 3CG8550A, 3CG8551, 3CG857B, 3CG893, 3CG9, 3CG9012, 3CG926, 2N3904, 3CG950, 3CG952, 3CG953, 3CG953M, 3CG965, 3CG966, 3CG966T, 3CG970
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