3CG950 Datasheet and Replacement
Type Designator: 3CG950
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 19 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO92
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3CG950 Datasheet (PDF)
3cg950.pdf

2SA950(3CG950) PNP /SILICON PNP TRANSISTOR :/Purpose: Audio frequency power amplifier. : h , 1W , 2SC2120(3DG2120) FEFeatures: High h ,1W output applications, Complementary pair with 2SC2120(3DG2120). FE/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -
3cg953.pdf

2SA953(3CG953) PNP /SILICON PNP TRANSISTOR :/Purpose: Audio frequency amplifier and driver stage. :,h ,V /Features: High total power dissipation, high h and FEFE CEOhigh V . CEO/Absolute maximum ratings(Ta=25) Symbol Rating Unit
3cg952.pdf

2SA952(3CG952) PNP /SILICON PNP TRANSISTOR :/Purpose: Output stage of portable radio and cassette type tape recorder, general purpose applications. :,h ,V /Features: High total dissipation, high h and low V . FE CE(sat)FE CE(sat)/Absolute maximum ratings(Ta=25)
3cg953m.pdf

2SA953M(3CG953M) PNP /SILICON PNP TRANSISTOR :/Purpose: Audio frequency amplifier and driver stage. :,h ,V /Features: High total power dissipation, high h and FEFE CEOhigh V . CEO/Absolute maximum ratings(Ta=25) Symbol Rating Unit
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , D667 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
History: KT8107D2 | BCP5516 | BFX74 | UN9217R | 2N1056 | 2SC999A | ECG2306
Keywords - 3CG950 transistor datasheet
3CG950 cross reference
3CG950 equivalent finder
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History: KT8107D2 | BCP5516 | BFX74 | UN9217R | 2N1056 | 2SC999A | ECG2306



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