3CG953 Datasheet and Replacement
Type Designator: 3CG953
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: TO92
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3CG953 Datasheet (PDF)
3cg953.pdf

2SA953(3CG953) PNP /SILICON PNP TRANSISTOR :/Purpose: Audio frequency amplifier and driver stage. :,h ,V /Features: High total power dissipation, high h and FEFE CEOhigh V . CEO/Absolute maximum ratings(Ta=25) Symbol Rating Unit
3cg953m.pdf

2SA953M(3CG953M) PNP /SILICON PNP TRANSISTOR :/Purpose: Audio frequency amplifier and driver stage. :,h ,V /Features: High total power dissipation, high h and FEFE CEOhigh V . CEO/Absolute maximum ratings(Ta=25) Symbol Rating Unit
3cg952.pdf

2SA952(3CG952) PNP /SILICON PNP TRANSISTOR :/Purpose: Output stage of portable radio and cassette type tape recorder, general purpose applications. :,h ,V /Features: High total dissipation, high h and low V . FE CE(sat)FE CE(sat)/Absolute maximum ratings(Ta=25)
3cg950.pdf

2SA950(3CG950) PNP /SILICON PNP TRANSISTOR :/Purpose: Audio frequency power amplifier. : h , 1W , 2SC2120(3DG2120) FEFeatures: High h ,1W output applications, Complementary pair with 2SC2120(3DG2120). FE/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SB917 | 2SA909 | D28C8 | BCP53QTA | 3DD5G | ECG46 | DTL1642
Keywords - 3CG953 transistor datasheet
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History: 2SB917 | 2SA909 | D28C8 | BCP53QTA | 3DD5G | ECG46 | DTL1642



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