3CG965 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3CG965
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO92LM
3CG965 Transistor Equivalent Substitute - Cross-Reference Search
3CG965 Datasheet (PDF)
3cg965.pdf
2SA965(3CG965) PNP /SILICON PNP TRANSISTOR : Purpose: Power amplifier applications, driver stage amplifier applications. : 2SC2235(3DG2235) Features: Complementary pair with 2SC2235(3DG2235). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -120 V
3cg966.pdf
2SA966(3CG966) PNP /SILICON PNP TRANSISTOR :/Purpose: AF power amplifier applications. : 2SC2236(3DG2236), 3W Features: Complementary to 2SC2236(3DG2236) and 3 Watts output applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -30 V CBO
3cg966t.pdf
2SA966T(3CG966T) PNP /SILICON PNP TRANSISTOR :/Purpose: AF power amplifier applications. : 2SC2236T(3DG2236T) Features: Complementary to 2SC2236T(3DG2236T). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -30 V CBO V -30 V CEO V -5.0 V EBO I -1.5 A C
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SA1011D | 2SB621A | 2SB940 | CSB764 | FPA720 | B764 | CSA968BY
History: 2SA1011D | 2SB621A | 2SB940 | CSB764 | FPA720 | B764 | CSA968BY
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BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D