3CG965 Specs and Replacement

Type Designator: 3CG965

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 40 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO92LM

 3CG965 Substitution

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3CG965 datasheet

 ..1. Size:213K  lzg

 3cg965.pdf pdf_icon

3CG965

2SA965(3CG965) PNP /SILICON PNP TRANSISTOR Purpose Power amplifier applications, driver stage amplifier applications. 2SC2235(3DG2235) Features Complementary pair with 2SC2235(3DG2235). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -120 V ... See More ⇒

 9.1. Size:230K  lzg

 3cg966.pdf pdf_icon

3CG965

2SA966(3CG966) PNP /SILICON PNP TRANSISTOR /Purpose AF power amplifier applications. 2SC2236(3DG2236) , 3W Features Complementary to 2SC2236(3DG2236) and 3 Watts output applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -30 V CBO ... See More ⇒

 9.2. Size:471K  lzg

 3cg966t.pdf pdf_icon

3CG965

2SA966T(3CG966T) PNP /SILICON PNP TRANSISTOR /Purpose AF power amplifier applications. 2SC2236T(3DG2236T) Features Complementary to 2SC2236T(3DG2236T). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -30 V CBO V -30 V CEO V -5.0 V EBO I -1.5 A C ... See More ⇒

Detailed specifications: 3CG9, 3CG9012, 3CG926, 3CG937, 3CG950, 3CG952, 3CG953, 3CG953M, 2N5401, 3CG966, 3CG966T, 3CG970, 3CK005, 3CK010, 3CK05, 3CK050, 3CK10

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