All Transistors. 3CG966T Datasheet

 

3CG966T Datasheet and Replacement


   Type Designator: 3CG966T
   SMD Transistor Code: H96O_H96Y
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 120 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT89
 

 3CG966T Substitution

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3CG966T Datasheet (PDF)

 ..1. Size:471K  lzg
 3cg966t.pdf pdf_icon

3CG966T

2SA966T(3CG966T) PNP /SILICON PNP TRANSISTOR :/Purpose: AF power amplifier applications. : 2SC2236T(3DG2236T) Features: Complementary to 2SC2236T(3DG2236T). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -30 V CBO V -30 V CEO V -5.0 V EBO I -1.5 A C

 8.1. Size:230K  lzg
 3cg966.pdf pdf_icon

3CG966T

2SA966(3CG966) PNP /SILICON PNP TRANSISTOR :/Purpose: AF power amplifier applications. : 2SC2236(3DG2236), 3W Features: Complementary to 2SC2236(3DG2236) and 3 Watts output applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -30 V CBO

 9.1. Size:213K  lzg
 3cg965.pdf pdf_icon

3CG966T

2SA965(3CG965) PNP /SILICON PNP TRANSISTOR : Purpose: Power amplifier applications, driver stage amplifier applications. : 2SC2235(3DG2235) Features: Complementary pair with 2SC2235(3DG2235). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -120 V

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 3CK005 | 2N4396 | 3CK2 | 2SB1059 | 3CG953 | 2N3624

Keywords - 3CG966T transistor datasheet

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