3CK1216 Specs and Replacement

Type Designator: 3CK1216

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO251

 3CK1216 Substitution

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3CK1216 datasheet

 ..1. Size:193K  china

 3ck1216.pdf pdf_icon

3CK1216

3CK1216 PNP Ta=25 1 PCM W Ta=75 20 IC 4 A Tjm 150 Tstg -55 150 ICB=0.01m V(BR)CBO 120 V A V(BR)CEO ICE=1mA 100 V IEB=0.01m V(BR)EBO 6 V A ICBO VCB=100V 1 A ICBO VCB=4V 1 A IC=2A VBEsat 1.2 V IB=0.2A VCEsat 0.5 VCE=5V... See More ⇒

 9.1. Size:122K  china

 3ck120.pdf pdf_icon

3CK1216

3CK120 PNP A B C D E PCM 500 mW ICM 200 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 35 50 20 35 V V(BR)CEO ICE=0.1mA 15 30 45 15 30 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.5 A ICEO VCE=10V 0.5 A IEBO VEB=4V ... See More ⇒

Detailed specifications: 3CK05, 3CK050, 3CK10, 3CK100, 3CK104, 3CK110, 3CK117, 3CK120, BC557, 3CK130, 3CK2, 3CK3, 3CK301, 3CK304, 3CK35, 3CK4, 3CK5323

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