3CK5323 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3CK5323
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO18
3CK5323 Transistor Equivalent Substitute - Cross-Reference Search
3CK5323 Datasheet (PDF)
1.1. 3ck5323.pdf 
Size:120K _china
3CK5323 型 PNP 硅大功率开关晶体管 参数符号 测试条件 规范值 单位 PCM TA=25℃ 10 W ICM 1.2 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 RthJC 17.5 ℃/W RthJA 175 V(BR)CBO ICB=10mA ≥75 V ≥50100 V(BR)CEO ICE=10mA ≥50 V ≥100 ≥50 V(BR)EBO IEB=0.1mA ≥5.0 V ≥150 ≥100 ICBO VCB=60V ≤5.0 mA 直 ≥200 ≥150 ICEO VCE=10V
Datasheet: 3CK1216 , 3CK130 , 3CK2 , 3CK3 , 3CK301 , 3CK304 , 3CK35 , 3CK4 , BC558 , 3CK9 , 3DD03T , 3DD04T , 3DD05 , 3DD05T , 3DD1 , 3DD10 , 3DD100 .
