3DD05T Specs and Replacement
Type Designator: 3DD05T
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 70
3DD05T Substitution
- BJT ⓘ Cross-Reference Search
3DD05T datasheet
3DD05T(DD05T) NPN PCM TC=75 30 W ICM 6 A Tjm 175 Tstg -55 150 VCE=10V Rth 3.33 /W IC=1A V(BR)CBO ICB=2mA 100 V V(BR)CEO ICE=2mA 60 V V(BR)EBO IEB=2mA 5.0 V ICBO VCB=50V 1.0 mA ICEO VCE=50V 1.0 mA IEBO VEB=4V 1.0 mA VBEsat ... See More ⇒
3DD05(3DF05) NPN A B C D E F G PCM Tc=75 5 W ICM 0.7 A Tjm 175 Tstg -55 150 VCE=10V Rth 20 /W IC=0.1A V(BR)CBO ICB=5mA 80 150 200 250 350 450 600 V V(BR)CEO ICE=5mA 50 110 150 200 250 300 400 V V(BR)EBO IEB=1mA 6.0 V A-D... See More ⇒
Detailed specifications: 3CK304, 3CK35, 3CK4, 3CK5323, 3CK9, 3DD03T, 3DD04T, 3DD05, A733, 3DD1, 3DD10, 3DD100, 3DD101, 3DD102, 3DD103, 3DD104, 3DD11
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