All Transistors. 3DD05T Datasheet

 

3DD05T Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DD05T

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO276AB_TO220_TO257

3DD05T Transistor Equivalent Substitute - Cross-Reference Search

 

3DD05T Datasheet (PDF)

1.1. 3dd05t.pdf Size:144K _china

3DD05T

3DD05T(DD05T)型 NPN 硅低频大功率晶体管 参数符号 测试条件 规范值 单位 PCM TC=75℃ 30 W ICM 6 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 3.33 ℃/W IC=1A V(BR)CBO ICB=2mA ≥100 V V(BR)CEO ICE=2mA ≥60 V V(BR)EBO IEB=2mA ≥5.0 V ICBO VCB=50V ≤1.0 mA 直 流 ICEO VCE=50V ≤1.0 mA 参 IEBO VEB=4V ≤1.0 mA 数 VBEsat ≤

5.1. 3dd05.pdf Size:149K _china

3DD05T

3DD05(3DF05)型 NPN 硅低频大功率晶体管 规范值 参数符号 测试条件 单位 A B C D E F G PCM Tc=75℃ 5 W ICM 0.7 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 20 ℃/W IC=0.1A V(BR)CBO ICB=5mA ≥80 ≥150 ≥200 ≥250 ≥350 ≥450 ≥600 V V(BR)CEO ICE=5mA ≥50 ≥110 ≥150 ≥200 ≥250 ≥300 ≥400 V V(BR)EBO IEB=1mA ≥6.0 V A-D

Datasheet: 3CK304 , 3CK35 , 3CK4 , 3CK5323 , 3CK9 , 3DD03T , 3DD04T , 3DD05 , 2N60C , 3DD1 , 3DD10 , 3DD100 , 3DD101 , 3DD102 , 3DD103 , 3DD104 , 3DD11 .

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