3DD102 PDF and Equivalents Search

 ..1. Size:150K  china

 3dd102.pdf

3DD101/3DD102 NPN A B C D E F PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55 150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=3mA 100 150 200 250 300 350 V V(BR)CEO ICE=3mA 50 100 150 200 250 300 V V(BR)EBO IEB=1mA 4.0 V ICBO VCB=50V 0.... See More ⇒

 0.1. Size:209K  inchange semiconductor

 3dd102a.pdf

isc Silicon NPN Power Transistor 3DD102A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO DC Current Gain- h = 20(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 0.8V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier , DC Transform ... See More ⇒

 0.2. Size:182K  inchange semiconductor

 3dd102d.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD102D DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor For aud... See More ⇒

 0.3. Size:210K  inchange semiconductor

 3dd102c.pdf

isc Silicon NPN Power Transistor 3DD102C DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min.) (BR)CEO DC Current Gain- h = 20(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 1.5V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier , DC Transform ... See More ⇒