3DD12 Datasheet and Replacement

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD12NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: QZJ840611 4. Use for Low-speed swit

NPN R 3DD128F H6D 3DD128F H6D VCEO 200 V NPN IC 3.5 A Ptot TC=25 50 W

NPN R 3DD128F H8D 3DD128F H8D VCEO 200 V NPN IC 3.5 A Ptot TC=25 60 W

NPN R 3DD128F H8D 3DD128F H8D VCEO 200 V NPN IC 3.5 A Ptot TC=25 60 W

NPN R 3DD128 A8D 3DD128 A8D NPN VCEO 200 V IC 5 A Ptot TC=25 60 W

NPN R 3DD128F A7D 3DD128F A7D NPN VCEO 200 V IC 5 A , Ptot TC=25 50 W

NPN R 3DD128 A8D 3DD128 A8D NPN VCEO 200 V IC 5 A Ptot TC=25 60 W

NPN R 3DD127 D3 3DD127 D3 NPN VCEO 400 V IC 2.5 A Ptot TC=25 40 W

NPN R 3DD128F H5D 3DD128F H5D VCEO 200 V NPN IC 3.5 A Ptot TC=25 50 W

NPN R 3DD128F H3D 3DD128F H3D VCEO 200 V NPN IC 3.5 A Ptot TC=25 40 W

NPN R 3DD127 D5 3DD127 D5 NPN VCEO 400 V IC 2.5 A Ptot W TC=25 40

NPN R 3DD127D 3DD127D NPN VCEO 400 V IC 2.5 A Ptot TC=25 50 W

NPN R 3DD128F 3DD128F NPN VCEO 200 V IC 4 A Ptot TC=25 50 W

NPN R 3DD127 D5 3DD127 D5 NPN VCEO 400 V IC 2.5 A Ptot W TC=25 40

NPN R 3DD128F H6D 3DD128F H6D VCEO 200 V NPN IC 3.5 A Ptot TC=25 50 W

NPN R 3DD128 Y8D 3DD128 Y8D NPN VCEO 200 V IC 4 A Ptot TC=25 60 W

NPN R 3DD128 Y8D 3DD128 Y8D NPN VCEO 200 V IC 4 A Ptot TC=25 60 W

NPN R 3DD128F A7D 3DD128F A7D NPN VCEO 200 V IC 5 A , Ptot TC=25 50 W

NPN R 3DD128F H5D 3DD128F H5D VCEO 200 V NPN IC 3.5 A Ptot TC=25 50 W

NPN R 3DD127 D3 3DD127 D3 NPN VCEO 400 V IC 2.5 A Ptot W TC=25 40

NPN R 3DD128F H3D 3DD128F H3D VCEO 200 V NPN IC 3.5 A Ptot TC=25 40 W

3DD122(TIP122) NPN PCM Tc=25 65 W 5 I A 8 Tjm 150 Tstg -55~150 VCE=10V Rth 1.9 /W IC=1.5A V(BR)CBO ICB=2mA 100 V V(BR)CEO ICE=10mA 100 V V(BR)EBO IEB=1mA 5.0 V VCB= 100V 0.2 ICBO VCB= 0.5V mA BRCBO2.0 Tc=125