3DD12 Specs and Replacement
Type Designator: 3DD12
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 500 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 50 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
3DD12 Substitution
- BJT ⓘ Cross-Reference Search
3DD12 datasheet
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD12 NPN Silicon Low Frequency High Power Transistor Features 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards QZJ840611 4. Use for Low-speed swit... See More ⇒
Detailed specifications: 3DD1, 3DD10, 3DD100, 3DD101, 3DD102, 3DD103, 3DD104, 3DD11, BC546, 3DD122, 3DD127D3, 3DD127D5, 3DD128A8D, 3DD128FA7D, 3DD128FH3D, 3DD128FH5D, 3DD128FH6D
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