3DD13005G8D Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DD13005G8D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO220AB
3DD13005G8D Transistor Equivalent Substitute - Cross-Reference Search
3DD13005G8D Datasheet (PDF)
3dd13005g8d.pdf
NPN R 3DD13005 G8D 3DD13005 G8D NPN VCEO 400 V IC 4 A Ptot W TC=25 75
3dd13005g3d.pdf
NPN R 3DD13005 G3D 3DD13005 G3D NPN VCEO 400 V IC 4 A Ptot W TC=25 40
3dd13005g7d.pdf
NPN R 3DD13005 G7D 3DD13005 G7D NPN VCEO 400 V IC 4 A Ptot W TC=25 50
3dd13005grd.pdf
NPN R 3DD13005 GRD 3DD13005 GRD NPN VCEO 400 V IC 4 A Ptot TC=25 75 W
3dd13005grd.pdf
NPN R 3DD13005 GRD 3DD13005 GRD NPN VCEO 400 V IC 4 A Ptot TC=25 75 W
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N6593