3DD175 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DD175
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
3DD175 Transistor Equivalent Substitute - Cross-Reference Search
3DD175 Datasheet (PDF)
3dd175.pdf
3DD175/3DD176 NPN A B C D E F G PCM TC=75 300 W ICM 30 A Tjm 175 Tstg -55~150 VCE=10V Rth 0.33 /W IC=5A V(BR)CBO ICB=5mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=15mA 5.0 V
3dd1724.pdf
3DD1724 NPN PCM TC=75 60 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V Rth 1.67 /W IC=1.5A V(BR)CBO ICB=5mA 120 V V(BR)CEO ICE=7mA 80 V V(BR)EBO IEB=10mA 10 V ICBO VCB=80V 0.1 mA ICEO VCE=50V 0.5 mA IEBO VEB=4V 0.1 mA VBEsat 1.5
3dd176.pdf
3DD175/3DD176 NPN A B C D E F G PCM TC=75 300 W ICM 30 A Tjm 175 Tstg -55~150 VCE=10V Rth 0.33 /W IC=5A V(BR)CBO ICB=5mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=15mA 5.0 V
3dd171.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD171(172), 3DD175(176) NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97 4. U
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
