All Transistors. 3DD2334 Datasheet

 

3DD2334 Datasheet and Replacement


   Type Designator: 3DD2334
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO220
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3DD2334 Datasheet (PDF)

 ..1. Size:540K  lzg
 3dd2334.pdf pdf_icon

3DD2334

2SC2334(3DD2334) NPN /SILICON NPN TRANSISTOR :DC/DC Purpose: Use for high voltage high speed switching, for a drive in devices such as switching regulators,DC/DC converters,high frequency power amplifiers. 2SA1010(3CD1010)

 9.1. Size:126K  china
 3dd237.pdf pdf_icon

3DD2334

3DD237(BD237) NPN PCM TC=25 25 W ICM 2 A Tjm 150 Tstg -55~150 VCE=10V Rth 5 /W IC=0.4A V(BR)CBO ICB0.1mA 100 V V(BR)CEO ICE10mA 80 V V(BR)EBO IEB=0.1mA 5 V ICBO VCB=100V 100 A IEBO VEB=5V 1 mA IC=1A VCEsat 0.6 V IB=0.1A

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 3DD4617H | AC160A | DTA123EET1G | ESM2060 | MP602 | 90T2 | SBC847CWT1G

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