3DD2334 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DD2334
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO220
3DD2334 Transistor Equivalent Substitute - Cross-Reference Search
3DD2334 Datasheet (PDF)
..1. Size:540K lzg
3dd2334.pdf
3dd2334.pdf
2SC2334(3DD2334) NPN /SILICON NPN TRANSISTOR :DC/DC Purpose: Use for high voltage high speed switching, for a drive in devices such as switching regulators,DC/DC converters,high frequency power amplifiers. 2SA1010(3CD1010)
9.1. Size:126K china
3dd237.pdf
3dd237.pdf
3DD237(BD237) NPN PCM TC=25 25 W ICM 2 A Tjm 150 Tstg -55~150 VCE=10V Rth 5 /W IC=0.4A V(BR)CBO ICB0.1mA 100 V V(BR)CEO ICE10mA 80 V V(BR)EBO IEB=0.1mA 5 V ICBO VCB=100V 100 A IEBO VEB=5V 1 mA IC=1A VCEsat 0.6 V IB=0.1A
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
