3DD253 Specs and Replacement
Type Designator: 3DD253
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 7
Package: TO3
3DD253 Substitution
- BJT ⓘ Cross-Reference Search
3DD253 datasheet
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD253(254),3DD255(256),3DD257(258) NPN Silicon Low Frequency High Power Transistor Features 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards GJB33 ... See More ⇒
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD257(3DD258) NPN Silicon Low Frequency High Power Transistor Features 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ8... See More ⇒
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD257(3DD258) NPN Silicon Low Frequency High Power Transistor Features 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ8... See More ⇒
Detailed specifications: 3DD176, 3DD2028LL, 3DD203, 3DD204, 3DD2073, 3DD21, 3DD2334, 3DD237, TIP35C, 3DD255, 3DD257, 3DD259, 3DD260, 3DD262, 3DD264, 3DD2655, 3DD267
Keywords - 3DD253 pdf specs
3DD253 cross reference
3DD253 equivalent finder
3DD253 pdf lookup
3DD253 substitution
3DD253 replacement
