All Transistors. 3DD255 Datasheet

 

3DD255 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 3DD255
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 7
   Noise Figure, dB: -
   Package: TO3

 3DD255 Transistor Equivalent Substitute - Cross-Reference Search

   

3DD255 Datasheet (PDF)

 ..1. Size:25K  shaanxi
3dd255.pdf

3DD255

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD257(3DD258)NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ8

 0.1. Size:150K  jilin sino
3dd2553.pdf

3DD255

NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2553 FOR LOW FREQUENCY R3DD2553 \ Package ;NSpe MAIN CHARACTERISTICS TO-3P(H)IS 1700 V BV CBO8 A I C4 V(max) V

 9.1. Size:25K  shaanxi
3dd257.pdf

3DD255

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD257(3DD258)NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ8

 9.2. Size:31K  shaanxi
3dd253.pdf

3DD255

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD253(254),3DD255(256),3DD257(258) NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33

 9.3. Size:32K  shaanxi
3dd259.pdf

3DD255

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD259(260,261), 3DD262(263) NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, Q

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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