All Transistors. 3DD57 Datasheet

 

3DD57 Datasheet and Replacement


   Type Designator: 3DD57
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO276AB TO220 TO257
 

 3DD57 Substitution

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3DD57 Datasheet (PDF)

 ..1. Size:151K  china
 3dd57.pdf pdf_icon

3DD57

3DD56/3DD57 NPN A B C D E F PCM TC=75 10 W ICM 3 A Tjm 175 Tstg -55~150 VCE=10V Rth 10 /W IC=0.2A V(BR)CBO ICB=3mA 30 50 80 110 150 200 V V(BR)CEO ICE=3mA 30 50 80 110 150 200 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=20V 0.5 mA

Datasheet: 3DD507 , 3DD51 , 3DD510 , 3DD511 , 3DD512 , 3DD515 , 3DD53 , 3DD56 , BD140 , 3DD58 , 3DD59 , 3DD5A , 3DD5G , 3DD6 , 3DD60 , 3DD6012A6 , 3DD62 .

History: 2SC1654A | 2SC4138 | CP398 | FPS6520 | 2N3963 | LMBT3906LT1G | 2SC2314D

Keywords - 3DD57 transistor datasheet

 3DD57 cross reference
 3DD57 equivalent finder
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