3DD58 Datasheet and Replacement
Type Designator: 3DD58
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO276AB TO220 TO257
3DD58 Substitution
3DD58 Datasheet (PDF)
3dd58.pdf

3DD58 NPN A B C D E F PCM Tc=75 10 W ICM 1.5 A Tjm 175 Tstg -55~150 VCE=10V Rth 10 /W IC=0.2A V(BR)CBO ICB=3mA 30 50 80 110 150 200 V V(BR)CEO ICE=3mA 30 50 80 110 150 200 V V(BR)EBO IEB=3mA 5.0 V ICBO VCB=50V 0.5 mA
Datasheet: 3DD51 , 3DD510 , 3DD511 , 3DD512 , 3DD515 , 3DD53 , 3DD56 , 3DD57 , BC337 , 3DD59 , 3DD5A , 3DD5G , 3DD6 , 3DD60 , 3DD6012A6 , 3DD62 , 3DD63 .
History: 2SC2812 | GES4403 | STC4350F | BLY12 | BC848B-AU | 2SD1260A | 2SD1354O
Keywords - 3DD58 transistor datasheet
3DD58 cross reference
3DD58 equivalent finder
3DD58 lookup
3DD58 substitution
3DD58 replacement
History: 2SC2812 | GES4403 | STC4350F | BLY12 | BC848B-AU | 2SD1260A | 2SD1354O



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