3DD5G Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DD5G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 7
Noise Figure, dB: -
Package: TO276AB TO220 TO257
3DD5G Transistor Equivalent Substitute - Cross-Reference Search
3DD5G Datasheet (PDF)
..1. Size:165K china
3dd5g.pdf
3dd5g.pdf
3DD5GI-T NPN G H I PCM Tc=75 25 W ICM 1.5 A Tjm 175 Tstg -55~150 VCE=10V Rth 4 /W IC=0.5A V(BR)CBO ICE=1mA 400 500 600 V V(BR)CEO ICE=1mA 400 500 600 V V(BR)EBO IEB=0.5mA 5.0 V ICBO VCE=100V 0.5 mA ICEO VCE=100V 0.5 mA
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
