All Transistors. 3DD62 Datasheet

 

3DD62 Datasheet and Replacement


   Type Designator: 3DD62
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 7.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO276AB TO220 TO257
 

 3DD62 Substitution

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3DD62 Datasheet (PDF)

 ..1. Size:151K  china
 3dd62.pdf pdf_icon

3DD62

3DD62/3DD63/3DD64 NPN A B C D E F PCM TC=75 50 W ICM 7.5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=7mA 30 50 80 110 150 200 V V(BR)CEO ICE=7mA 30 50 80 110 150 200 V V(BR)EBO IEB=10mA 5.0 V ICBO VCB=20V

Datasheet: 3DD57 , 3DD58 , 3DD59 , 3DD5A , 3DD5G , 3DD6 , 3DD60 , 3DD6012A6 , TIP122 , 3DD63 , 3DD64 , 3DD65 , 3DD66 , 3DD68 , 3DD69 , 3DD6E-T , 3DD7 .

History: UN2122

Keywords - 3DD62 transistor datasheet

 3DD62 cross reference
 3DD62 equivalent finder
 3DD62 lookup
 3DD62 substitution
 3DD62 replacement

 

 
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