3DD66 Specs and Replacement
Type Designator: 3DD66
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 15
3DD66 Substitution
- BJT ⓘ Cross-Reference Search
3DD66 datasheet
3DD65/3DD66 NPN A B C D E F PCM TC=75 75 W ICM 10 A Tjm 175 Tstg -55 150 VCE=10V Rth 1.33 /W IC=1.5A V(BR)CBO ICB=10mA 30 50 80 110 150 200 V V(BR)CEO ICE=10mA 30 50 80 110 150 200 V V(BR)EBO IEB=15mA 5.0 V ICBO VCB=20V 1.... See More ⇒
Detailed specifications: 3DD5G, 3DD6, 3DD60, 3DD6012A6, 3DD62, 3DD63, 3DD64, 3DD65, A1941, 3DD68, 3DD69, 3DD6E-T, 3DD7, 3DD71, 3DD73, 3DD741A4, 3DD741A8
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