All Transistors. 3DD68 Datasheet

 

3DD68 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DD68

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3_TO254

3DD68 Transistor Equivalent Substitute - Cross-Reference Search

3DD68 Datasheet (PDF)

1.1. br3dd6802q.pdf Size:707K _update

3DD68
3DD68

BUL6802(BR3DD6802Q) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-126(R)塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-126(R) Plastic Package. 特征 / Features 耐压高,快速转换, 安全工作区宽,符合 ROHS 规范。 High Voltage Capability High Speed Switching, wide SOA,ROHS compliant. 用途 / Applications 主要用于节能灯、日

1.2. 3dd68.pdf Size:131K _china

3DD68

3DD68/3DD69 型 NPN 硅低频大功率晶体管 规范值 参数符号 测试条件 单位 A B C D E F PCM TC=75℃ 100 W ICM 15 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 1 ℃/W IC=3A V(BR)CBO ICB=10mA ≥30 ≥50 ≥80 ≥110 ≥150 ≥200 V V(BR)CEO ICE=10mA ≥30 ≥50 ≥80 ≥110 ≥150 ≥200 V V(BR)EBO IEB=20mA ≥5.0 V ICBO VCB=20V ≤1.5 mA

Datasheet: 3DD6 , 3DD60 , 3DD6012A6 , 3DD62 , 3DD63 , 3DD64 , 3DD65 , 3DD66 , TIP122 , 3DD69 , 3DD6E-T , 3DD7 , 3DD71 , 3DD73 , 3DD741A4 , 3DD741A8 , 3DD742A8 .

 


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