All Transistors. 3DG1009A Datasheet

 

3DG1009A Datasheet and Replacement


   Type Designator: 3DG1009A
   SMD Transistor Code: HA3_HA4
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 1.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT23
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3DG1009A Datasheet (PDF)

 ..1. Size:335K  lzg
 3dg1009a.pdf pdf_icon

3DG1009A

2SC1009A(3DG1009A) NPN /SILICON NPN TRANSISTOR : Purpose: FM/AM,RF amplifier, mixer, oscillator. Features: Low C ,high f . ob T/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 50 V CBO V 30 V CEO

 8.1. Size:127K  china
 3dg100.pdf pdf_icon

3DG1009A

3DG100 NPN A B C D PCM 100 mW ICM 20 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 30 40 30 40 V V(BR)CEO ICE=0.1mA 20 30 20 30 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.03 A ICEO VCE=10V 0.05 A IEBO VEB=1.5V 0.03 A

 9.1. Size:127K  china
 3dg103.pdf pdf_icon

3DG1009A

3DG103 NPN A B C D PCM 100 mW ICM 20 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 40 20 40 V V(BR)CEO ICE=0.1mA 15 25 15 25 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1 A

 9.2. Size:127K  china
 3dg102.pdf pdf_icon

3DG1009A

3DG102 NPN A B C D PCM 100 mW ICM 20 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 40 60 100 140 V V(BR)CEO ICE=0.1mA 30 50 80 120 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1 A

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Keywords - 3DG1009A transistor datasheet

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