3DG1009A pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

3DG1009A Specs and Replacement

Type Designator: 3DG1009A

SMD Transistor Code: HA3_HA4

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 1.8 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT23

3DG1009A Substitution

- BJT ⓘ Cross-Reference Search

3DG1009A datasheet

..1. Size:335K lzg

3dg1009a.pdf pdf_icon

2SC1009A(3DG1009A) NPN /SILICON NPN TRANSISTOR Purpose FM/AM,RF amplifier, mixer, oscillator. Features Low C ,high f . ob T /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 50 V CBO V 30 V CEO... See More ⇒

8.1. Size:127K china

3dg100.pdf pdf_icon

3DG100 NPN A B C D PCM 100 mW ICM 20 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 30 40 30 40 V V(BR)CEO ICE=0.1mA 20 30 20 30 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.03 A ICEO VCE=10V 0.05 A IEBO VEB=1.5V 0.03 A ... See More ⇒

9.1. Size:127K china

3dg103.pdf pdf_icon

3DG103 NPN A B C D PCM 100 mW ICM 20 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 40 20 40 V V(BR)CEO ICE=0.1mA 15 25 15 25 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1 A ... See More ⇒

9.2. Size:127K china

3dg102.pdf pdf_icon

3DG102 NPN A B C D PCM 100 mW ICM 20 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 40 60 100 140 V V(BR)CEO ICE=0.1mA 30 50 80 120 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1 A ... See More ⇒