All Transistors. 3DG114B Datasheet

 

3DG114B Datasheet and Replacement


   Type Designator: 3DG114B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO18
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3DG114B Datasheet (PDF)

 ..1. Size:103K  china
 3dg114b.pdf pdf_icon

3DG114B

3DG114B NPN PCM TA=25 1000 mW ICM 1000 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 1.0 A ICEO VCE=30V 1.0 A VBEsat 0.5 IC=500mA V IB=50mA VCEsat 1.5 VC

 9.1. Size:118K  china
 3dg117b.pdf pdf_icon

3DG114B

3DG117B NPN PCM TA=25 300 mW ICM 30 mA Tjm 175 Tstg -55~175 V(BR)CBO ICB=0.1mA 160 V V(BR)CEO ICE=0.1mA 160 V V(BR)EBO IEB=0.1mA 4.0 V ICEO VCE=10V 0.1 A IC=10mA VCEsat 0.7 V IB=1mA VCE=10V hFE 30 IC=5mA VCE=10V

 9.2. Size:127K  china
 3dg112.pdf pdf_icon

3DG114B

3DG112 NPN A B C D PCM 300 mW ICM 50 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 40 20 40 V V(BR)CEO ICE=0.1mA 15 30 15 30 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1 A

 9.3. Size:128K  china
 3dg111.pdf pdf_icon

3DG114B

3DG111 NPN A B C D PCM 300 mW ICM 50 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 40 60 80 V V(BR)CEO ICE=0.1mA 15 30 45 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1 A

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BD13516STU | MRF5812 | ECG32 | BC848CPDW1T1G | DCX123JH | MCH3245 | SDT9301

Keywords - 3DG114B transistor datasheet

 3DG114B cross reference
 3DG114B equivalent finder
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 3DG114B substitution
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