3DG1213A Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DG1213A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO92
3DG1213A Transistor Equivalent Substitute - Cross-Reference Search
3DG1213A Datasheet (PDF)
3dg1213a.pdf
2SC1213(3DG1213) 2SC1213A(3DG1213A) NPN /SILICON NPN TRANSISTOR :/Purpose: Low frequency amplifier applications . : 2SA673(3CG673)/2SA673A(3CG673A) Features: Complementary pair with 2SA673(3CG673)/2SA673A(3CG673A). /Absolute maximum ratings(Ta=25) Symbol Rating Unit 2SC1
3dg1213.pdf
2SC1213(3DG1213) 2SC1213A(3DG1213A) NPN /SILICON NPN TRANSISTOR :/Purpose: Low frequency amplifier applications . : 2SA673(3CG673)/2SA673A(3CG673A) Features: Complementary pair with 2SA673(3CG673)/2SA673A(3CG673A). /Absolute maximum ratings(Ta=25) Symbol Rating Unit 2SC1
3dg121.pdf
3DG121 NPN A B C D PCM 500 mW ICM 100 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 40 60 40 60 V V(BR)CEO ICE=0.1mA 30 45 30 45 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.5 A IEBO VEB=1.5V 0.1 A
3dg12.pdf
3DG12 NPN A B C D PCM 700 mW ICM 300 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 40 60 100 140 V V(BR)CEO ICE=0.1mA 30 50 80 120 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 1.0 A ICEO VCE=10V 1.0 A IEBO VEB=1.5V 0.5 A
3dg120.pdf
3DG120 NPN A B C D PCM 500 mW ICM 150 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 40 60 40 60 V V(BR)CEO ICE=0.1mA 30 45 30 45 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.05 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.05 A
3dg122.pdf
3DG122 NPN A B C D PCM 500 mW ICM 100 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 40 60 40 60 V V(BR)CEO ICE=0.1mA 30 45 30 45 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.2 A IEBO VEB=1.5V 0.1 A
3dg123s.pdf
STD123S(3DG123S) NPN /SILICON NPN TRANSISTOR : Purpose: Low voltage large current drivers. : , Features: Low collector saturation voltage, high DC current gain, large current capability. /Absolute maximum ratings(Ta=25) Symbol
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SD2073 | 2SD892A | 2SA1694Y | 2STA1695 | 2N3566 | AS394CN
History: 2SD2073 | 2SD892A | 2SA1694Y | 2STA1695 | 2N3566 | AS394CN
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BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D