3DG122 Specs and Replacement
Type Designator: 3DG122
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 500 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO18
3DG122 Substitution
- BJT ⓘ Cross-Reference Search
3DG122 datasheet
3DG12 NPN A B C D PCM 700 mW ICM 300 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 40 60 100 140 V V(BR)CEO ICE=0.1mA 30 50 80 120 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 1.0 A ICEO VCE=10V 1.0 A IEBO VEB=1.5V 0.5 A ... See More ⇒
3DG120 NPN A B C D PCM 500 mW ICM 150 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 40 60 40 60 V V(BR)CEO ICE=0.1mA 30 45 30 45 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.05 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.05 A ... See More ⇒
Detailed specifications: 3DG114B, 3DG1162, 3DG117B, 3DG12, 3DG120, 3DG121, 3DG1213, 3DG1213A, D209L, 3DG123S, 3DG130, 3DG1317, 3DG1318, 3DG140, 3DG1417, 3DG142, 3DG1473
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