All Transistors. 3DG1317 Datasheet

 

3DG1317 Datasheet and Replacement


   Type Designator: 3DG1317
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 85
   Noise Figure, dB: -
   Package: TO92
 

 3DG1317 Substitution

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3DG1317 Datasheet (PDF)

 ..1. Size:197K  foshan
 3dg1317.pdf pdf_icon

3DG1317

2SC1317(3DG1317) NPN /SILICON NPN TRANSISTOR :/Purpose: Audio frequency power amplifier and driver. : V , 2SA719(3CG719)/Features: Low V ,complementary CE(sat) CE(sat)pair with 2SA719(3CG719). /Absolute maximum ratings(Ta=25) Symbol Rating U

 8.1. Size:268K  lzg
 3dg1318.pdf pdf_icon

3DG1317

2SC1318(3DG1318) NPN /SILICON NPN TRANSISTOR : Purpose: Audio frequency power amplifier and driver. : V , 2SA720(3CG720)/Features: Low V ,complementary CE(sat)CE(sat)pair with 2SA720(3CG720). /Absolute maximum ratings(Ta=25) Symbol Ratin

 9.1. Size:121K  china
 3dg130.pdf pdf_icon

3DG1317

3DG130 NPN A B C D PCM 700 mW ICM 300 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 40 60 40 60 V V(BR)CEO ICE=0.1mA 30 45 30 45 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.5 A ICEO VCE=10V 1.0 A IEBO VEB=1.5V 0.5 A

Datasheet: 3DG12 , 3DG120 , 3DG121 , 3DG1213 , 3DG1213A , 3DG122 , 3DG123S , 3DG130 , 2SC2383Y , 3DG1318 , 3DG140 , 3DG1417 , 3DG142 , 3DG1473 , 3DG1473A , 3DG150 , 3DG160 .

History: BFQ131

Keywords - 3DG1317 transistor datasheet

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