3DG1317 Specs and Replacement
Type Designator: 3DG1317
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 85
Package: TO92
3DG1317 Substitution
- BJT ⓘ Cross-Reference Search
3DG1317 datasheet
2SC1317(3DG1317) NPN /SILICON NPN TRANSISTOR /Purpose Audio frequency power amplifier and driver. V , 2SA719(3CG719) /Features Low V ,complementary CE(sat) CE(sat) pair with 2SA719(3CG719). /Absolute maximum ratings(Ta=25 ) Symbol Rating U... See More ⇒
2SC1318(3DG1318) NPN /SILICON NPN TRANSISTOR Purpose Audio frequency power amplifier and driver. V , 2SA720(3CG720) /Features Low V ,complementary CE(sat) CE(sat) pair with 2SA720(3CG720). /Absolute maximum ratings(Ta=25 ) Symbol Ratin... See More ⇒
Detailed specifications: 3DG12, 3DG120, 3DG121, 3DG1213, 3DG1213A, 3DG122, 3DG123S, 3DG130, 2SC5198, 3DG1318, 3DG140, 3DG1417, 3DG142, 3DG1473, 3DG1473A, 3DG150, 3DG160
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