3DG161 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

3DG161 Specs and Replacement

Type Designator: 3DG161

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.02 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO92 SOT23 TO18

3DG161 Substitution

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3DG161 datasheet

..1. Size:126K china

3dg161.pdf pdf_icon

3DG161(A G) NPN A B C D E F G PCM TA=25 300 mW ICM 20 mA Tjm 175 Tstg -55 150 V(BR)CEO ICE=0.5mA 60 100 140 180 220 260 300 V 0 V(BR)EBO IEB=0.1mA 5.0 V ICBO VCE=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VCE=1.5V 0.1 A VBEsat IC=10mA 3... See More ⇒

9.1. Size:309K blue-rocket-elect

br3dg1684.pdf pdf_icon

2SC1684(BR3DG1684) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features , High hFE, low VCE(sat). / Applications General purpose amplifier. / Equivalent Circuit ... See More ⇒

9.2. Size:114K china

3dg162.pdf pdf_icon

3DG162 NPN A B C D E F G H I J PCM 300 mW IC 20 mA Tjm 175 V(BR)CB ICB=0.1mA 6 10 14 18 22 6 10 14 18 22 V 0 0 0 0 0 0 0 0 0 0 V(BR)CE ICE=0.1mA 6 10 14 18 22 6 10 14 18 22 V O 0 0 0 0 0 V(BR)EB 5.0 0 0 0 0 0 V ... See More ⇒

9.3. Size:363K foshan

3dg1627a.pdf pdf_icon