3DG1627AF PDF and Equivalents Search

 

3DG1627AF Specs and Replacement

Type Designator: 3DG1627AF

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO126

 3DG1627AF Substitution

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3DG1627AF datasheet

 ..1. Size:386K  foshan

3dg1627af.pdf pdf_icon

3DG1627AF

2SC1627AF(3DG1627AF) NPN /SILICON NPN TRANSISTOR Purpose Driver stage amplifier and voltage amplifier. 30 35W 2SA817AF(3CG817AF) Features Driver stage of 30 to 35 watts application, complementary pair with 2SA817AF(3CG817AF). /Absolute maximum ratings(... See More ⇒

 6.1. Size:363K  foshan

3dg1627a.pdf pdf_icon

3DG1627AF

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 8.1. Size:114K  china

3dg162.pdf pdf_icon

3DG1627AF

3DG162 NPN A B C D E F G H I J PCM 300 mW IC 20 mA Tjm 175 V(BR)CB ICB=0.1mA 6 10 14 18 22 6 10 14 18 22 V 0 0 0 0 0 0 0 0 0 0 V(BR)CE ICE=0.1mA 6 10 14 18 22 6 10 14 18 22 V O 0 0 0 0 0 V(BR)EB 5.0 0 0 0 0 0 V ... See More ⇒

 8.2. Size:264K  foshan

3dg1623.pdf pdf_icon

3DG1627AF

2SC1623(3DG1623) NPN /SILICON NPN TRANSISTOR /Purpose Audio frequency general amplifier application. h , V 2SA812(3CG812) /Features High h and V , complementary pair FE CEO, FE CEO with 2SA812(3CG812). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V ... See More ⇒

Detailed specifications: 3DG1473, 3DG1473A, 3DG150, 3DG160, 3DG161, 3DG162, 3DG1623, 3DG1627A, TIP142, 3DG1675, 3DG1740M, 3DG1740S, 3DG1741AM, 3DG1741S, 3DG180, 3DG1809, 3DG181

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