3DG1627AF Specs and Replacement
Type Designator: 3DG1627AF
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO126
3DG1627AF Substitution
- BJT ⓘ Cross-Reference Search
3DG1627AF datasheet
2SC1627AF(3DG1627AF) NPN /SILICON NPN TRANSISTOR Purpose Driver stage amplifier and voltage amplifier. 30 35W 2SA817AF(3CG817AF) Features Driver stage of 30 to 35 watts application, complementary pair with 2SA817AF(3CG817AF). /Absolute maximum ratings(... See More ⇒
3DG162 NPN A B C D E F G H I J PCM 300 mW IC 20 mA Tjm 175 V(BR)CB ICB=0.1mA 6 10 14 18 22 6 10 14 18 22 V 0 0 0 0 0 0 0 0 0 0 V(BR)CE ICE=0.1mA 6 10 14 18 22 6 10 14 18 22 V O 0 0 0 0 0 V(BR)EB 5.0 0 0 0 0 0 V ... See More ⇒
2SC1623(3DG1623) NPN /SILICON NPN TRANSISTOR /Purpose Audio frequency general amplifier application. h , V 2SA812(3CG812) /Features High h and V , complementary pair FE CEO, FE CEO with 2SA812(3CG812). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V ... See More ⇒
Detailed specifications: 3DG1473, 3DG1473A, 3DG150, 3DG160, 3DG161, 3DG162, 3DG1623, 3DG1627A, TIP142, 3DG1675, 3DG1740M, 3DG1740S, 3DG1741AM, 3DG1741S, 3DG180, 3DG1809, 3DG181
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